195 characteristic curves i c -v ce characteristics (typical) h fe -i c characteristics (typical) h fe -i c temperature characteristics (typical) v ce (sat)-i c temperature characteristics (typical) v ce (sat)-i b characteristics (typical) i c -v be temperature characteristics (typical) j-a -pw characteristics p t -t a characteristics safe operating area (soa) sdc04 (t a =25 c) symbol ratings unit v cbo 100 15 v v ceo 100 15 v v ebo 6v i c 1.5 a i cp 2.5 (pw 1ms, d u 10%) a i b 0.1 a p t 3 (t a =25 c) w t j 150 c t stg C 40 to +150 c j C a 41.6 c/w (t a =25 c) symbol unit conditions i cbo 10 av cb =85v i ebo 13mav eb =6v v ceo 85 100 115 v i c =10ma h fe 2000 5000 12000 v ce =4v, i c =1a v ce (sat) 1.0 1.3 v v be (sat) 1.7 2.2 v v fec 1.2 1.8 v i fec =1a t on 0.6 sv cc 30v, t stg 3.0 si c =1a, t f 1.0 si b1 = C i b2 =2ma f t 30 mhz v ce =12v, i e = C 0.1a c ob 20 pf v cb =10v, f=1mhz i c =1a, i b =2ma specification min typ max 2.5 2.0 1.5 1.0 0.5 0 012345 6 i c (a) v ce (v) i b =5ma 1ma 0.5m a 0.3ma 0.2ma 20000 10000 5000 1000 500 100 50 0.03 0.05 0.1 0.5 1 2.5 (v ce =4v) typ h fe i c ( a ) 20000 10000 5000 1000 500 100 50 0.03 0.05 0.1 0.5 1 2.5 h fe i c (a) (v ce =4v) t a =125 c 75 c 25 c C 30 c 2 1 0 0.3 0.5 1 2.5 v ce (sat) (v) i c (a) (i c / i b =1000) t a =125 c 75 c 25 c C 30 c 3 2 1 0 0.1 0.5 1 5 10 50 100 v ce (sat) (v) i b (ma) i c =4a i c =2a i c -1a 2.5 2.0 1.5 1.0 0.5 0 01 23 v be (v) (v ce =4v) i c (a) t a = 1 2 5 c 75 c 2 5 c C 30 c 50 10 5 1 1 5 10 50 100 500 1000 j C a ( c / w) pw (ms) 3 2 1 0 0 4 3 2 1 50 100 150 1-1 chip operation 2-2 chip operation 3-3 chip operation 4-4 chip operation p t (w) ta ( c) 5 1 0.5 0.1 0.05 0.03 3 5 10 50 100 i c (a) v ce (v) single pulse without heatsink t a =25 c 1 0 0 s 1 m s 10m s 2 r 1 r 2 15,16 1 4 13,14 3 6 11,12 5 8 9,10 7 r 1 : 4k ? typ r 2 : 150 ? typ npn darlington with built-in avalanche diode external dimensions e sd absolute maximum ratings electrical characteristics equivalent circuit diagram
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